1N, datasheet for 1N – SILICON 3-LAYER BILATERAL TRIGGERS provided by New Jersey Semi-Conductor Products, Inc.. 1N pdf. 1NA,AA. Leakage Current. IBeth Direction!). (Applied Voltage • 14 Voml NJ Semi-Conductors encourages customers to verify that datasheets are . 1N Datasheet: Silicon 3-Layer Bilateral Triggers, 1N PDF Download New Jersey Semiconductor, 1N Datasheet PDF, Pinouts, Data Sheet.
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Has selectable vatasheet option and well characterized data that permits accurate response shaping see graph. The Micro-T package coupled with performance permits space premium designs to become a reality.
1978_Motorola_Power_Device_Data 1978 Motorola Power Device Data
R IN Devices meeting the requirements of EIA specifications RSC, andas well as differential current mode and open collector peripheral drivers are covered. Mechanical tuning systems are being outdated by the following advantages of electronic tuning systems: Design techniques will encompass the production-proven gate array technique plus other design approaches to provide the flexibility required for cost-effective, standard bipolar LSI functions.
Applications include card and tape readers, pattern and character recognition, shaft encoders, position sensors, counters, and others. Ripple rejection is typically 0. See your Motorola representative for pricing.
To locate the exact page number, see Catalog lndex Page High-Voltage Transistors These high-voltage transistors are designed for driving neon bulbs and Nixie” indicator tubes, for direct line operation, and for other applications requiring high-voltage capability at relatively low datsaheet current. Developed to suppress transients in the automotive system, this device operates in the forward mode as a standard rectifier or reverse mode as a power zener diode and will protect expensive mobile transceivers, radios and tape decks from over-voltage conditions.
Choppers and Switches 4. EB provides typical 50 ohm data and describes the test circuit with which the character- izations were derived. Maximum sensitivity occurs at approximately nm. Pulse modulator SCRs provide pulse current capacity to Amperes for radar and similar applications. More information concerning the device for your specific linear design needs can be obtained through your local Motorola Sales Office or Motorola ratasheet. Information on devices in non-standard packaging may be obtained through your local Motorola Sales Office or Motorola distributor.
Contact your nearest Motorola sales office for assistance in additional device selection and complete technical data. Nevertheless, some basic comparisons can be drawn that might simplify the job of trigger selection for designers who have not already formed specific preferences.
All devices may also be obtained in chip form lor the manufac- turer of hybrid microcircuits. Input loading of -0 25 mA maximum. This power technology promises an even brighter future in advancing the state of the art — high voltage and very high current devices are on the horizon and will soon become a viable alternative to Thyristor devices on the designer’s specification list. One example is the popular J-FET.
1N NTE Equivalent NTE DIODE – DIAC 28V+-4V – Wholesale Electronics
Improved DC volume control. The selection tables are arranged to highlight the prime selection criteria in easy- to-use order. Technological advances have permitted new levels of circuit complexity. For availability of chips for other products, contact your Motorola sales representative. MCF – Flat Package.
MC is the same as the MCbul has a much higher transient response. The basic arrays with the addition of custom metalization. Gain control, decoupling, source and load impedances and load mismatch are treated and instructions for building a test fixture are also provided.
Low Level 2 Chips are sold in increments of ten 10 only. Arrangement within each application group is datashheet the order of increas- ing output power. They are offered in current ranges of 0. R 1N 1N 1N Some of the more important features include: Complex Functions As the areas of application for couplers grow, more complicated output functions will be required.
To obtain copies of these notes, simply list the AN number or numbers and send your request on adtasheet company letterhead to: Output current capability can eatasheet increased further through use of one or more external pass transistors.
Low Differential Output dc Drift Batch-processed, high-impact plastic provides outstanding mechanical ruggedness while oxide or glass surface passivation pro- tects each die against impurity contamination and moisture penetration for long-term electrical stability. Reverse datawheet anode to easel is not available.
1N Datasheet PDF – New Jersey Semiconductor
Voltage, current, switching, temperature and secondary breakdown requirements are specified in detail. Ceramic packages with a cold sealing process will also be available in quantity orders in the future. The McMOS family is available in a wide variety of basic and complex logic functions at medium speeds and very low power dissipation. MOSFETs listed are characterized primarily as switches but can be used as satisfactory general-purpose amplifiers.
Phototransistors Phototransistors are used where moderate sensitivity and medium speed 2.
(PDF) 1N5760 Datasheet download
Improved version of MC For other devices, such as transistors, other important characteristics or suggested applications are specified in their particular section. These device types are recommended for exact replacement only. Search the history of over billion web pages on the Internet. Opan collectors or 2. Devices described here are intended for industrial and communica- tions applications.
Graphical and numerical methods of solution are clearly described, along with sample problems. Contact your Motorola representative for more information. NMOS Memory Probably nowhere else has semiconductor technology achieved greater complexities and higher circuit densities in practical, real-world products than in today’s advanced NMOS memories.